Loaʻa i ka silikon carbide ceramics ka ikaika wela kiʻekiʻe, ke kiʻekiʻe o ka wela oxidation kūpaʻa, ka pale ʻana i ka lole maikaʻi, ke kūpaʻa wela maikaʻi, ka liʻiliʻi liʻiliʻi o ka hoʻonui ʻana i ka wela, ka conductivity thermal kiʻekiʻe, ka paʻakikī kiʻekiʻe, ka pale ʻana i ka wela, ke kūpaʻa corrosion a me nā waiwai maikaʻi ʻē aʻe.Ua hoʻohana nui ʻia i ka kaʻa, ka mīkini, ka mālama ʻana i ke kaiapuni, ka ʻenehana aerospace, ka ʻike uila, ka ikehu a me nā ʻano ʻē aʻe, a ua lilo ia i mea hoʻololi ʻole ʻia me ka hana maikaʻi loa i nā ʻoihana ʻoihana.ʻĀnō e hōʻike aku wau iā ʻoe!
ʻO ka hoʻopaʻa paʻa ʻole
Manaʻo ʻia ʻo Pressureless sintering ʻo ke ʻano hoʻohiki maikaʻi loa no ka sintering SiC.E like me nā ʻano hana sintering ʻokoʻa, hiki ke hoʻokaʻawale ʻia ka sintering pressureless i ka sintering solid-phase a me ka wai-phase sintering.Ma o ka ultra-fine β- Ua hoʻohui ʻia ka nui kūpono o B a me C (maʻiʻo oxygen ma lalo o 2%) i ka pauka SiC i ka manawa like, a me s.Ua hoʻopaʻa ʻia ʻo proehazka i ke kino sintered SiC me ka haʻahaʻa kiʻekiʻe ma mua o 98% ma 2020 ℃.A. Mulla et al.Ua hoʻohana ʻia ʻo Al2O3 a me Y2O3 e like me nā mea hoʻohui a hoʻopaʻa ʻia ma 1850-1950 ℃ no 0.5 μm β- SiC (ʻo ka ʻili o ka ʻāpana he wahi liʻiliʻi o SiO2).ʻOi aku ka nui o ka nui o nā seramika SiC ma mua o 95% o ka nui o ka manaʻo, a he liʻiliʻi ka nui o ka palaoa a me ka nui awelika.ʻO 1.5 microns.
Paʻi paʻi wela
Hiki ke hoʻopaʻa paʻa wale ʻia ʻo SiC maʻemaʻe i ka wela kiʻekiʻe loa me ka ʻole o nā mea hoʻohui sintering, no laila nui ka poʻe e hoʻokō nei i ke kaʻina hana sintering wela no SiC.Ua nui nā hōʻike e pili ana i ka sintering wela o SiC ma o ka hoʻohui ʻana i nā mea kōkua sintering.ʻO Alliegro et al.Ua aʻo ʻia i ka hopena o ka boron, aluminika, nickel, hao, chromium a me nā mea hoʻohui metala ʻē aʻe ma ka densification SiC.Hōʻike nā hopena i ka alumini a me ka hao ka mea hoʻohui maikaʻi loa e hoʻolaha i ka sintering wela wela SiC.Ua aʻo ʻo FFlange i ka hopena o ka hoʻohui ʻana i ka nui like ʻole o Al2O3 i nā waiwai o ka SiC i kaomi wela.Manaʻo ʻia ʻo ka densification o ka SiC paʻa wela e pili ana i ke ʻano o ka hemo a me ka ua.Eia nō naʻe, hiki i ke kaʻina hana sintering wela ke hana i nā ʻāpana SiC me ke ʻano maʻalahi.ʻO ka nui o nā huahana i hana ʻia e ke kaʻina hana sintering wela hoʻokahi manawa he liʻiliʻi loa, ʻaʻole kūpono i ka hana ʻoihana.
ʻO ka hoʻopaʻa ʻana i ka sintering isostatic wela
I mea e lanakila ai i nā hemahema o ke kaʻina hana sintering maʻamau, ua hoʻohana ʻia ke ʻano B-type a me C-type ma ke ʻano he mea hoʻohui a ua hoʻohana ʻia ka ʻenehana hoʻoheheʻe isostatic wela.Ma 1900 ° C, loaʻa nā seramika crystalline maikaʻi me ka nui o ka nui ma mua o 98, a ʻo ka ikaika kulou i ka lumi wela hiki ke hiki i 600 MPa.ʻOiai ʻo ka isostatic pressing sintering hiki ke hoʻohua i nā huahana paʻakikī me nā ʻano paʻakikī a me nā waiwai mechanical maikaʻi, pono e hoʻopaʻa ʻia ka sintering, he paʻakikī ke hoʻokō i ka hana ʻoihana.
Ka hoʻopaʻa ʻana
ʻO Reaction sintered silicon carbide, i ʻike ʻia ʻo ka silicon carbide paʻa ponoʻī, e pili ana i ke kaʻina hana i hana ai ka porous billet me ke kinoea a i ʻole ka wai wai e hoʻomaikaʻi ai i ka maikaʻi o ka billet, hoʻemi i ka porosity, a me nā huahana i hoʻopau ʻia me ka ikaika a me ka pololei.e lawe i ka α- SiC pauda a me ka graphite i hui pū ʻia i kekahi ʻāpana a hoʻomehana ʻia i kahi 1650 ℃ e hana i kahi billet square.I ka manawa like, komo a komo i loko o ka billet ma o ke kinoea Si a hana me ka graphite e hana i ka β-SiC, i hui pū ʻia me nā ʻāpana α-SiC.Ke hoʻokomo piha ʻia ʻo Si, hiki ke loaʻa ke kino sintered pane me ka nui piha a me ka nui ʻole shrinkage.Ke hoʻohālikelike ʻia me nā kaʻina hana sintering ʻē aʻe, liʻiliʻi ka hoʻololi ʻana o ka hoʻololi ʻana o ka sintering i ke kaʻina densification, a hiki ke hoʻomākaukau ʻia nā huahana me ka nui kūpono.Eia nō naʻe, ʻo ka loaʻa ʻana o ka nui o SiC i loko o ke kino sintered e ʻoi aku ka maikaʻi o nā waiwai wela o ka hopena sintered SiC ceramics.
Ka manawa hoʻouna: Jun-08-2022